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Details for article 138 of 177 found articles
| Title: |
Simulations of the breakdown characteristics of n-on-p backside-illumination Silicon Photomultipliers by TCAD |
| Author: |
He, Ran Yan, Guangqing Liu, Jian Cheng, Wenxuan Liu, Rongdan Liang, Kun Yang, Ru Han, Dejun |
| Appeared in: |
Results in physics |
| Paging: | Volume 8 () nr. C pages 76-78 |
| Year: |
2018 |
| Contents: | |
| Publisher: |
Beijing Normal University |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 138 of 177 found articles
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