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                                       Details for article 31 of 72 found articles
 
 
  Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems
 
 
Title: Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems
Author: Lv, Ruipeng
Sun, Huiqin
Yang, Longfei
Liu, Zhen
Zhang, Yuanhao
Li, Yuan
Huang, Yong
Guo, Zhiyou
Appeared in: Results in physics
Paging: Volume 59 () nr. C pages p.
Year: 2024
Contents:
Publisher: The Author(s)
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 31 of 72 found articles
 
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