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                                       Details for article 47 of 98 found articles
 
 
  Investigation and improvement of single-event burn-out in 4H-SiC trench insulated gate bipolar transistors
 
 
Title: Investigation and improvement of single-event burn-out in 4H-SiC trench insulated gate bipolar transistors
Author: Liu, Yan-juan
Wang, Ying
Wang, Yu-peng
Wang, Le-ning
Appeared in: Results in physics
Paging: Volume 29 () nr. C pages p.
Year: 2021
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 47 of 98 found articles
 
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