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                                       Details for article 81 of 208 found articles
 
 
  GaN based negative capacitance heterojunction field-effect transistors with <30 mV/dec subthreshold slope for steep switching operation
 
 
Title: GaN based negative capacitance heterojunction field-effect transistors with <30 mV/dec subthreshold slope for steep switching operation
Author: Han, S.-W.
Eom, S.-K.
Kang, M.-J.
Kim, H.-S.
Seo, K.-S.
Cha, H.-Y.
Appeared in: Results in physics
Paging: Volume 16 () nr. C pages p.
Year: 2020
Contents:
Publisher: The Authors
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 81 of 208 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands