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                                       Details for article 54 of 115 found articles
 
 
  Effects of Temperature and Channel Doping on the BSIM3 Threshold Voltage Model of NMOSFET form Substrate Bias Dependent Methodology
 
 
Title: Effects of Temperature and Channel Doping on the BSIM3 Threshold Voltage Model of NMOSFET form Substrate Bias Dependent Methodology
Author: Muanghlua, Rangson
Niemcharoen, Surasak
Poyai, Amporn
Ruangphanit, Anucha
Appeared in: Procedia computer science
Paging: Volume 86 (2016) nr. C pages 4 p.
Year: 2016
Contents:
Publisher: The Authors
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 54 of 115 found articles
 
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