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                                       Details for article 40 of 140 found articles
 
 
  Excitation Dependence of Photoluminescence in the 1.5-1.6 μm Wavelength Region from Grown Dislocation-Rich Si Layers
 
 
Title: Excitation Dependence of Photoluminescence in the 1.5-1.6 μm Wavelength Region from Grown Dislocation-Rich Si Layers
Author: Shklyaev, A.A.
Latyshev, A.V.
Ichikawa, M.
Appeared in: Physics procedia
Paging: Volume 32 (2012) nr. C pages 10 p.
Year: 2012
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 40 of 140 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands