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                                       Details for article 5 of 35 found articles
 
 
  Analog and RF assessment of sub-20 nm 4H-SiC trench gate MOSFET for high frequency applications
 
 
Title: Analog and RF assessment of sub-20 nm 4H-SiC trench gate MOSFET for high frequency applications
Author: Chaujar, Rishu
Appeared in: A.E.Ü.
Paging: Volume 98 (2019) nr. C pages 51-57
Year: 2019
Contents:
Publisher: Elsevier GmbH
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 35 found articles
 
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