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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 7 of 25 found articles
| Title: |
DC and microwave characteristics of Lg 50nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications |
| Author: |
Murugapandiyan, P. Ravimaran, S. William, J. |
| Appeared in: |
A.E.Ü. |
| Paging: | Volume 77 (2017) nr. C pages 6 p. |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Elsevier GmbH |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 7 of 25 found articles
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