|
| next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 1 of 34 found articles
| Title: |
A 0.15 μm GaN HEMT device to circuit approach towards dual-band ultra-low noise amplifier using defected ground bias technique |
| Author: |
Gupta, Manishankar Prasad Kumar, Sandeep Elizabeth Caroline, B. Song, Hanjung Kumar, Vijay Gorre, Pradeep |
| Appeared in: |
A.E.Ü. |
| Paging: | Volume 168 () nr. C pages p. |
| Year: |
2023 |
| Contents: | |
| Publisher: |
Elsevier GmbH |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 34 found articles
| next >> |