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                                       Details for article 6 of 57 found articles
 
 
  An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions
 
 
Title: An electrostatic analytical modeling of high-k stacked gate-all-around heterojunction tunnel FETs considering the depletion regions
Author: Usha, Chennoji
Vimala, Palanichamy
Appeared in: A.E.Ü.
Paging: Volume 110 (2019) nr. C pages p.
Year: 2019
Contents:
Publisher: Elsevier GmbH
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 57 found articles
 
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