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Journal description
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Details for article 1 of 9 found articles
| Title: |
A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications |
| Author: |
Sowmya, K. Balamurugan, N.B. Parvathy, V. |
| Appeared in: |
A.E.Ü. |
| Paging: | Volume 103 (2019) nr. C pages 46-56 |
| Year: |
2019 |
| Contents: | |
| Publisher: |
Elsevier GmbH |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 1 of 9 found articles
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