Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices
Titel:
Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices
Auteur:
Khera, Ejaz Ahmad Ullah, Hafeez Imran, Muhammad Niaz, N.A. Hussain, Fayyaz Arif Khalil, R.M. Rasheed, Umbreen Atif Sattar, M. Iqbal, Fasial Mahta, Chandreswar Rana, Anwar Manzoor Kim, Sungjun