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                                       Details for article 34 of 58 found articles
 
 
  Non uniform distribution of indium in the In x Ga 1−x N/GaN quantum well is more advantageous for quantum well light emitting diodes
 
 
Title: Non uniform distribution of indium in the In x Ga 1−x N/GaN quantum well is more advantageous for quantum well light emitting diodes
Author: Gorai, Anup
Mistry, Apu
Biswas, Dipankar
Appeared in: Optik
Paging: Volume 149 (2017) nr. C pages 6 p.
Year: 2017
Contents:
Publisher: Elsevier GmbH
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 34 of 58 found articles
 
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