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Journal description
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Details for article 83 of 87 found articles
| Title: |
The influence of electronic processes on the epitaxial regrowth rate in ion implanted silicon |
| Author: |
Williams, J.S. Short, K.T. |
| Appeared in: |
Nuclear instruments and methods in physics research |
| Paging: | Volume 209-210 (1983) nr. P2 pages 5 p. |
| Year: |
1983 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 83 of 87 found articles
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