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                                       Details for article 55 of 87 found articles
 
 
  Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si
 
 
Title: Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si
Author: Ishiwara, Hiroshi
Naruke, Kiyomi
Furukawa, Seijiro
Appeared in: Nuclear instruments and methods in physics research
Paging: Volume 209-210 (1983) nr. P2 pages 5 p.
Year: 1983
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 55 of 87 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands