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                                       Details for article 29 of 83 found articles
 
 
  Formation of buried insulating layers in silicon by the implantation of high doses of oxygen
 
 
Title: Formation of buried insulating layers in silicon by the implantation of high doses of oxygen
Author: Hemment, P.L.F.
Maydell-Ondrusz, E.
Stephens, K.G.
Butcher, J.
Ioannou, D.
Alderman, J.
Appeared in: Nuclear instruments and methods in physics research
Paging: Volume 209-210 (1983) nr. P1 pages 8 p.
Year: 1983
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 29 of 83 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands