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                                       Details for article 447 of 871 found articles
 
 
  Ion channeling study of radiation induced defects in a bent silicon crystal
 
 
Title: Ion channeling study of radiation induced defects in a bent silicon crystal
Author: Wang, G.H.
Cong, P.J.
Gibson, W.M.
Sun, C.R.
Kim, I.J.
Salman, S.
Pisharody, M.
Baker, S.I.
Carrigan Jr, R.A.
Forster, J.S.
Mitchell, I.V.
Appeared in: Nuclear instruments and methods in physics research
Paging: Volume 218 (1983) nr. 1-3 pages 4 p.
Year: 1983
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 447 of 871 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands