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Ion channeling study of radiation induced defects in a bent silicon crystal |
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Title: |
Ion channeling study of radiation induced defects in a bent silicon crystal |
Author: |
Wang, G.H. Cong, P.J. Gibson, W.M. Sun, C.R. Kim, I.J. Salman, S. Pisharody, M. Baker, S.I. Carrigan Jr, R.A. Forster, J.S. Mitchell, I.V. |
Appeared in: |
Nuclear instruments and methods in physics research |
Paging: |
Volume 218 (1983) nr. 1-3 pages 4 p. |
Year: |
1983 |
Contents: |
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Publisher: |
Published by Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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