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Journal description
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Details for article 427 of 766 found articles
| Title: |
MeV backscattering analysis of annealing behaviors of ion-implanted arsenic in silicon |
| Author: |
Inada, T. Miyakawa, H. Ohfuji, T. Benzaki, K. Onoda, H. Yuge, Y. Ushio, S. |
| Appeared in: |
Nuclear instruments and methods in physics research |
| Paging: | Volume 218 (1983) nr. 1-3 pages 5 p. |
| Year: |
1983 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 427 of 766 found articles
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