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                                       Details for article 13 of 22 found articles
 
 
  Near Si/SiO2 interfacial layer formation of uncompensated P states in B-doped Si by thermal oxidation, evidenced by ESR at low T
 
 
Title: Near Si/SiO2 interfacial layer formation of uncompensated P states in B-doped Si by thermal oxidation, evidenced by ESR at low T
Author: Stesmans, A.
Braet, J.
Appeared in: Surface science letters
Paging: Volume 172 (1986) nr. 2 pages 1 p.
Year: 1986
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 22 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands