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Journal description
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Details for article 3 of 64 found articles
| Title: |
A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery |
| Author: |
Chen, Weizhong Deng, Zhijie Chen, Zesheng Zhou, Yangqi Han, Zhengsheng Wang, Zeheng |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 54 () nr. 6 pages 4786-4797 |
| Year: |
2025-04-16 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 64 found articles
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