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  AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
 
 
Title: AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
Author: Lee, Hsin-Ying
Chang, Ting-Wei
Lee, Ching-Ting
Appeared in: Journal of electronic materials
Paging: Volume 50 () nr. 6 pages 3748-3753
Year: 2021-04-15
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 90 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands