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Details for article 18 of 56 found articles
| Title: |
Effects of Etching Temperature on the Characteristics of Recessed-Anode AlGaN/GaN Schottky Barrier Diodes |
| Author: |
Shi, Yijun Luo, Xiao Wang, Hongyue Chen, Wanjun Yang, Xiaofeng |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 50 () nr. 11 pages 6291-6296 |
| Year: |
2021-08-25 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18 of 56 found articles
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