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                                       Details for article 70 of 85 found articles
 
 
  Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowire n-MOSFETs
 
 
Title: Statistical Prediction of Nanosized-Metal-Grain-Induced Threshold-Voltage Variability for 3D Vertically Stacked Silicon Gate-All-Around Nanowire n-MOSFETs
Author: Sung, Wen-Li
Li, Yiming
Appeared in: Journal of electronic materials
Paging: Volume 49 () nr. 11 pages 6865-6871
Year: 2020-08-01
Contents:
Publisher: Springer US, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 70 of 85 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands