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Journal description
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Details for article 45 of 85 found articles
| Title: |
Investigation of 1.9 μm GINA Simulated as Intrinsic Layer in a GaAs Homojunction: From 25% Towards 32.4% Conversion Yield |
| Author: |
Arbia, Marwa Ben Helal, Hicham Saidi, Faouzi Maaref, Hassen |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 49 () nr. 11 pages 6308-6316 |
| Year: |
2020-09-03 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 45 of 85 found articles
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