Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy
Titel:
Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy
Auteur:
Romero, O.S. Aragon, A.A. Rahimi, N. Shima, D. Addamane, S. Rotter, T.J. Mukherjee, S. D. Dawson, L.R. Lester, L.F. Balakrishnan, G.