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                                       Details for article 19 of 52 found articles
 
 
  Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers
 
 
Title: Four-State Sub-12-nm FETs Employing Lattice-Matched II–VI Barrier Layers
Author: Jain, F.
Chan, P.-Y.
Suarez, E.
Lingalugari, M.
Kondo, J.
Gogna, P.
Miller, B.
Chandy, J.
Heller, E.
Appeared in: Journal of electronic materials
Paging: Volume 42 (2013) nr. 11 pages 3191-3202
Year: 2013
Contents:
Publisher: Springer US, Boston
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 19 of 52 found articles
 
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