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Details for article 13 of 16 found articles
| Title: |
Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs |
| Author: |
Lin, Y. C. Shie, Sheng-Li Shie, Tin-En Wong, Yuen-Yee Chen, K. S. Chang, E. Y. |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 40 (2010) nr. 3 pages 289-294 |
| Year: |
2010 |
| Contents: | |
| Publisher: |
Springer US, Boston |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 13 of 16 found articles
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