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                                       Details for article 19 of 20 found articles
 
 
  Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy
 
 
Title: Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy
Author: Fang, Z.-Q.
Claflin, B.
Look, D. C.
Chai, F.
Odekirk, B.
Appeared in: Journal of electronic materials
Paging: Volume 40 (2011) nr. 11 pages 2179-2186
Year: 2011
Contents:
Publisher: Springer US, Boston
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 19 of 20 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands