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Journal description
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Details for article 2 of 28 found articles
| Title: |
Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation |
| Author: |
Pang, Liang Seo, Hui-Chan Chapman, Patrick Adesida, Ilesanmi Kim, Kyekyoon (Kevin) |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 39 (2010) nr. 5 pages 499-503 |
| Year: |
2010 |
| Contents: | |
| Publisher: |
Springer US, Boston |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 28 found articles
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