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Recovery of Dry Etching–Induced Damage in n-GaN by Nitrogen Plasma Treatment at Growth Temperature |
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Titel: |
Recovery of Dry Etching–Induced Damage in n-GaN by Nitrogen Plasma Treatment at Growth Temperature |
Auteur: |
Wang, X. Yu, G. Lei, B. Wang, X. Lin, C. Sui, Y. Meng, S. Qi, M. Li, A. |
Verschenen in: |
Journal of electronic materials |
Paginering: |
Jaargang 36 (2007) nr. 6 pagina's 697-701 |
Jaar: |
2007 |
Inhoud: |
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Uitgever: |
Kluwer Academic Publishers-Plenum Publishers, New York |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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