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  Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11$$\bar 2$$0) surface0) surface
 
 
Title: Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11$$\bar 2$$0) surface0) surface
Author: Katsuno, Masakazu
Ohtani, Noboru
Fujimoto, Tatsuo
Yashiro, Hirokatsu
Appeared in: Journal of electronic materials
Paging: Volume 34 (2005) nr. 3 pages 318
Year: 2005
Contents:
Publisher: Springer-Verlag, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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 Koninklijke Bibliotheek - National Library of the Netherlands