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Journal description
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Details for article 11 of 22 found articles
| Title: |
Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma |
| Author: |
Kong, S. -M. Choi, H. -J. Lee, B. -T. Han, S. -Y. Lee, J. L. |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 31 () nr. 3 pages 209-213 |
| Year: |
2002-04-02 |
| Contents: | |
| Publisher: |
Springer-Verlag, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 11 of 22 found articles
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