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Journal description
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Details for article 14 of 40 found articles
| Title: |
Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates |
| Author: |
Kim, H. S. Ko, D. H. Bae, D. L. Lee, N. I. Kim, D. W. Kang, H. K. Lee, M. Y. |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 27 (1998) nr. 4 pages L21-L25 |
| Year: |
1998 |
| Contents: | |
| Publisher: |
Springer-Verlag, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 40 found articles
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