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                                       Details for article 6 of 23 found articles
 
 
  Field-induced generation-recombination noise in (100) n-channel Si-MOSFET's at T = 4.2 K
 
 
Title: Field-induced generation-recombination noise in (100) n-channel Si-MOSFET's at T = 4.2 K
Author: Hendriks, E.A.
Zijlstra, R.J.J.
Appeared in: Physica. B+C, Low temperature and solid state physics + Atomic, molecular and plasma physics optics
Paging: Volume 147 (1988) nr. 2-3 pages 9 p.
Year: 1988
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 6 of 23 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands