Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design
Titel:
Physical model of a local threshold voltage shift in InGaZnO thin-film transistors under current stress for instability-aware circuit design
Auteur:
Yang, Tae Jun Kim, Je-Hyuck Cho, Jung Rae Lee, Hee Jun Kim, Kyungmin Park, Jaewon Choi, Sung-Jin Bae, Jong-Ho Kim, Dong Myong Kim, Changwook Park, Dong-Wook Kim, Dae Hwan