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Optimized annealing conditions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications |
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Titel: |
Optimized annealing conditions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications |
Auteur: |
Kim, Yeriaron Woo, Jiyong Im, Solyee Lee, Yeseul Kim, Jeong Hun Im, Jong-Pil Suh, Dongwoo Yang, Sang Mo Yoon, Sung-Min Moon, Seung Eon |
Verschenen in: |
Current applied physics |
Paginering: |
Jaargang 20 () nr. 12 pagina's 1441-1446 |
Jaar: |
2020 |
Inhoud: |
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Uitgever: |
The Authors |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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