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                                       Details for article 7 of 15 found articles
 
 
  Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory
 
 
Title: Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory
Author: Ismail, Muhammad
Jabeen, Shazia
Akber, Tahira
Talib, Ijaz
Hussain, Fayyaz
Rana, Anwar Manzoor
Hussain, Muhammad
Mahmood, Khalid
Ahmed, Ejaz
Bao, Dinghua
Appeared in: Current applied physics
Paging: Volume 18 (2018) nr. 8 pages 924-932
Year: 2018
Contents:
Publisher: Korean Physical Society
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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