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Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory |
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Title: |
Elimination of endurance degradation by oxygen annealing in bilayer ZnO/CeO2-x thin films for nonvolatile resistive memory |
Author: |
Ismail, Muhammad Jabeen, Shazia Akber, Tahira Talib, Ijaz Hussain, Fayyaz Rana, Anwar Manzoor Hussain, Muhammad Mahmood, Khalid Ahmed, Ejaz Bao, Dinghua |
Appeared in: |
Current applied physics |
Paging: |
Volume 18 (2018) nr. 8 pages 924-932 |
Year: |
2018 |
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Publisher: |
Korean Physical Society |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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