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  Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)
 
 
Title: Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)
Author: Hosoi, Takuji
Kirino, Takashi
Mitani, Shuhei
Nakano, Yuki
Nakamura, Takashi
Shimura, Takayoshi
Watanabe, Heiji
Appeared in: Current applied physics
Paging: Volume 12 (2012) nr. S3 pages 4 p.
Year: 2012
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 20 of 25 found articles
 
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