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Journal description
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Details for article 18 of 40 found articles
| Title: |
Electrical characteristics of homoepitaxial p-GaSb analyzed by the p–n junction: A correction on the Hall parameter of heteroepitaxial p-GaSb/SI–GaAs |
| Author: |
Kim, Jun Oh Noh, Sam Kyu |
| Appeared in: |
Current applied physics |
| Paging: | Volume 12 (2012) nr. 6 pages 4 p. |
| Year: |
2012 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18 of 40 found articles
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