Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 21 of 30 found articles
 
 
  New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region
 
 
Title: New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region
Author: Mehrad, Mahsa
Orouji, Ali A.
Appeared in: Current applied physics
Paging: Volume 12 (2012) nr. 5 pages 5 p.
Year: 2012
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 21 of 30 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands