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Journal description
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Details for article 12 of 20 found articles
| Title: |
High mobility, bottom gate, nanocrystalline silicon thin film transistors incorporating a nitrogenated incubation layer |
| Author: |
Bu, I.Y.Y. Flewitt, A.J. Milne, W.I. |
| Appeared in: |
Current applied physics |
| Paging: | Volume 11 (2011) nr. 2 pages 5 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 20 found articles
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