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                                       Details for article 38 of 50 found articles
 
 
  Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature
 
 
Title: Radio frequency source power-induced ion energy impact on SiN films deposited by using a pulsed-PECVD in SiH4–N2 plasma at room temperature
Author: Lee, Hwajune
Kim, Byungwhan
Kwon, Sanghee
Appeared in: Current applied physics
Paging: Volume 10 (2010) nr. 3 pages 4 p.
Year: 2010
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 38 of 50 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands