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                                       Details for article 11 of 66 found articles
 
 
  Characteristics of nitrogen-incorporated silicon oxycarbide films and plasmas for plasma enhanced chemical vapor deposition with TMOS/N2/NH3
 
 
Title: Characteristics of nitrogen-incorporated silicon oxycarbide films and plasmas for plasma enhanced chemical vapor deposition with TMOS/N2/NH3
Author: Chung, C.J.
Chung, T.H.
Shin, Y.M.
Kim, Y.
Appeared in: Current applied physics
Paging: Volume 10 (2010) nr. 2 pages 8 p.
Year: 2010
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 66 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands