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                                       Details for article 57 of 98 found articles
 
 
  Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer
 
 
Title: Memristive devices with a large memory margin based on nanocrystalline organic-inorganic hybrid CH3NH3PbBr3 perovskite active layer
Author: Lee, Yong Hun
Kim, Dae Hun
Wu, Chaoxing
Kim, Tae Whan
Appeared in: Organic electronics
Paging: Volume 62 () nr. C pages 412-418
Year: 2018
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 57 of 98 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands