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Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask |
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Titel: |
Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al2O3 bilayer mask |
Auteur: |
Li, Jingjie Cheng, Xinhong Wang, Qian Zheng, Li Shen, Lingyan Li, Xinchang Zhang, Dongliang Zhu, Hongyue Shen, DaShen Yu, Yuehui |
Verschenen in: |
Materials science in semiconductor processing |
Paginering: |
Jaargang 67 (2017) nr. C pagina's 6 p. |
Jaar: |
2017 |
Inhoud: |
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Uitgever: |
Published by Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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