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Journal description
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Details for article 3 of 39 found articles
| Title: |
Comparative studies of normally-off Al0.26Ga0.74N/AlN/GaN/Si high electron mobility transistors with different gate structures |
| Author: |
Lee, Ching-Sung Hsu, Wei-Chou Liu, Han-Yin Chen, Si-Fu Chen, Yu-Chang Yang, Shen-Tin |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 66 (2017) nr. C pages 5 p. |
| Year: |
2017 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 39 found articles
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