Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
Titel:
Strained c:Si0.55Ge0.45 with embedded e:Si0.75Ge0.25 S/D IFQW SiGe-pFET for DRAM periphery applications
Auteur:
Ritzenthaler, R. Schram, T. Witters, L. Mitard, J. Spessot, A. Caillat, C. Hellings, G. Eneman, G. Aoulaiche, M. Na, H.-J. Son, Y. Noh, K.B. Fazan, P. Lee, S.-G. Collaert, N. Mocuta, A. Horiguchi, N. Thean, A.V.-Y.