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Formation of nanorod InGaN/GaN multiple quantum wells using nickel nano-masks and dry etching for InGaN-based light-emitting diodes |
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Titel: |
Formation of nanorod InGaN/GaN multiple quantum wells using nickel nano-masks and dry etching for InGaN-based light-emitting diodes |
Auteur: |
Yang, G.F. Xie, F. Tong, Y.Y. Chen, P. Yu, Z.G. Yan, D.W. Xue, J.J. Zhu, H.X. Guo, Y. Li, G.H. Gao, S.M. |
Verschenen in: |
Materials science in semiconductor processing |
Paginering: |
Jaargang 30 (2015) nr. C pagina's 13 p. |
Jaar: |
2015 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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