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Journal description
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Details for article 23 of 42 found articles
| Title: |
Investigation of resistive switching properties in reliable, forming-free RRAM devices based on amorphous Sm2Zr2O7 thin films |
| Author: |
Tai, Hsin-Ching Huang, Cheng-Liang |
| Appeared in: |
Materials science in semiconductor processing |
| Paging: | Volume 195 () nr. C pages p. |
| Year: |
2025 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 23 of 42 found articles
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