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Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation |
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Titel: |
Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation |
Auteur: |
Li, Yifei Hou, Pengxiang Pan, Shuangyuan Wang, Pin Cheng, Weiwei Wang, Jing Yu, Le Li, Zheyang Jin, Rui |
Verschenen in: |
Materials science in semiconductor processing |
Paginering: |
Jaargang 187 () nr. C pagina's p. |
Jaar: |
2025 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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